IPD80R1K0CE
Manufacturer Part Number: IPD80R1K0CE | Manufacturer / Brand: Infineon Technologies |
Part of Description: MOSFET N-Ch 800V 5.7A DPAK-2 |
Lead Free Status / RoHS Status:
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Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
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Product parameters
Manufacturer | Infineon |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 800 V |
Id – Continuous Drain Current | 5.7 A |
Rds On – Drain-Source Resistance | 800 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage | 2.1 V |
Qg – Gate Charge | 31 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 150 C |
Pd – Power Dissipation | 83 W |
Channel Mode | Enhancement |
Tradename | CoolMOS |
Series | CoolMOS CE |
Brand | Infineon Technologies |
Configuration | Single |
Fall Time | 8 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Product Type | MOSFET |
Rise Time | 15 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 72 ns |
Typical Turn-On Delay Time | 25 ns |
Width | 6.22 mm |
Unit Weight | 0.011640 oz |
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