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IPD50N06S4-09
Manufacturer Part Number: IPD50N06S4-09 | Manufacturer / Brand: Infineon Technologies |
Part of Description: MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 |
Lead Free Status / RoHS Status:
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Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets:
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Product parameters
Manufacturer | Infineon |
Series | OptiMOS-T2 |
Packaging | MouseReel |
Brand | Infineon Technologies |
Product Type | MOSFET |
Factory Pack Quantity | 2500 |
Tradename | OptiMOS |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 60 V |
Id – Continuous Drain Current | 50 A |
Rds On – Drain-Source Resistance | 7.1 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage | 2 V |
Qg – Gate Charge | 47 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 71 W |
Channel Mode | Enhancement |
Configuration | Single |
Fall Time | 5 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Rise Time | 40 ns |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 15 ns |
Width | 6.22 mm |
Part # Aliases | SP000374321 IPD5N6S49XT IPD50N06S409ATMA1 |
Unit Weight | 0.011640 oz |
Type | OptiMOS T2 Power Transistor |
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