IPA60R190P6
Manufacturer Part Number: IPA60R190P6 | Manufacturer / Brand: Infineon Technologies |
Part of Description: MOSFET HIGH POWER_PRC/PRFRM | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
100% original and authentic
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Product parameters
Manufacturer | Infineon |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 600 V |
Id – Continuous Drain Current | 20.2 A |
Rds On – Drain-Source Resistance | 190 Ohms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage | 3.5 V |
Qg – Gate Charge | 37 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 150 C |
Pd – Power Dissipation | 34 W |
Channel Mode | Enhancement |
Tradename | CoolMOS |
Series | CoolMOS P6 |
Packaging | Tube |
Brand | Infineon Technologies |
Configuration | Single |
Fall Time | 7 ns |
Height | 16.15 mm |
Length | 10.65 mm |
Product Type | MOSFET |
Rise Time | 8 ns |
Factory Pack Quantity | 500 |
Subcategory | MOSFETs |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 15 ns |
Width | 4.85 mm |
Unit Weight | 0.068784 oz |
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