IPB120N06S4-H1

Manufacturer Part Number: IPB120N06S4-H1	Manufacturer / Brand: Infineon
Part of Description: MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: IPB120N06S4-H1.pdf
100% original and authentic 100% test report if single part is over 500USD 100% damaged replacement guaranteed

Product parameters

Manufacturer	Infineon
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	120 A
Rds On – Drain-Source Resistance	2.4 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	270 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	250 W
Channel Mode	Enhancement
Tradename	OptiMOS
Series	OptiMOS-T2
Packaging	Reel
Configuration	Single
Fall Time	15 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	5 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	60 ns
Typical Turn-On Delay Time	30 ns
Width	9.25 mm
Part # Aliases	IPB12N6S4H1XT SP000396274 IPB120N06S4H1ATMA1
Unit Weight	0.139332 oz

Get in Touch with Us Now

Please Submit Your Bill of Materials (BOM) List

Kindly provide your contact information in all required fields. Click "SUBMIT RFQ" and we'll email you soon. Alternatively, you can reach us at ga-ic@ic-golden.com

First name *

Last name *

Company Email *

Phone number *

Company name *

Country *

Upload BOM File: We support .zip, .rar, .xls, .xlsx, .csv, txt, pdf, png, jpg or jpeg files under 4MB