IPB180N04S4-01
Manufacturer Part Number: IPB180N04S4-01 | Manufacturer / Brand: Infineon Technologies |
Part of Description: MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
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Product parameters
Manufacturer | Infineon |
Series | OptiMOS-T2 |
Qualification | AEC-Q101 |
Brand | Infineon Technologies |
Product Type | MOSFET |
Factory Pack Quantity | 1000 |
Tradename | OptiMOS |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-263-7 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 40 V |
Id – Continuous Drain Current | 180 A |
Rds On – Drain-Source Resistance | 1.3 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage | 3 V |
Qg – Gate Charge | 135 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 188 W |
Channel Mode | Enhancement |
Configuration | Single |
Fall Time | 41 ns |
Height | 4.4 mm |
Length | 10 mm |
Rise Time | 24 ns |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 38 ns |
Typical Turn-On Delay Time | 35 ns |
Width | 9.25 mm |
Part # Aliases | IPB18N4S41XT SP000705694 IPB180N04S401ATMA1 |
Unit Weight | 0.056438 oz |
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