IPB80N04S2-H4
Manufacturer Part Number: IPB80N04S2-H4 | Manufacturer / Brand: Infineon |
Part of Description: MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
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Product parameters
Manufacturer | Infineon |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 40 V |
Id – Continuous Drain Current | 80 A |
Rds On – Drain-Source Resistance | 3.7 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 300 W |
Channel Mode | Enhancement |
Packaging | Reel |
Configuration | Single |
Fall Time | 22 ns |
Height | 4.4 mm |
Length | 10 mm |
Product Type | MOSFET |
Rise Time | 63 ns |
Factory Pack Quantity | 1000 |
Subcategory | MOSFETs |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 46 ns |
Typical Turn-On Delay Time | 23 ns |
Width | 9.25 mm |
Part # Aliases | SP000218165 IPB80N04S2H4ATMA1 |
Unit Weight | 0.139332 oz |
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