IPB80N06S2L-07
Manufacturer Part Number: IPB80N06S2L-07 | Manufacturer / Brand: Infineon |
Part of Description: MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
100% original and authentic
100% test report if single part is over 500USD
100% damaged replacement guaranteed
|
Product parameters
Manufacturer | Infineon |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 55 V |
Id – Continuous Drain Current | 80 A |
Rds On – Drain-Source Resistance | 6.7 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 210 W |
Channel Mode | Enhancement |
Tradename | OptiMOS |
Series | OptiMOS |
Packaging | Reel |
Configuration | Single |
Fall Time | 31 ns |
Height | 4.4 mm |
Length | 10 mm |
Product Type | MOSFET |
Rise Time | 35 ns |
Factory Pack Quantity | 1000 |
Subcategory | MOSFETs |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 28 ns |
Typical Turn-On Delay Time | 18 ns |
Width | 9.25 mm |
Part # Aliases | SP000218867 IPB80N06S2L07ATMA1 |
Unit Weight | 0.139332 oz |
Get in Touch with Us Now