IPD35N10S3L-26
Manufacturer Part Number: IPD35N10S3L-26 | Manufacturer / Brand: Infineon |
Part of Description: MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
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Product parameters
Manufacturer | Infineon |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 100 V |
Id – Continuous Drain Current | 35 A |
Rds On – Drain-Source Resistance | 24 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage | 1.2 V |
Qg – Gate Charge | 30 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 71 W |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Tradename | OptiMOS |
Series | OptiMOS-T |
Configuration | Single |
Fall Time | 3 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Product Type | MOSFET |
Rise Time | 4 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 18 ns |
Typical Turn-On Delay Time | 6 ns |
Width | 6.22 mm |
Part # Aliases | IPD35N1S3L26XT SP000386184 IPD35N10S3L26ATMA1 |
Unit Weight | 0.139332 oz |
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