IPD50N06S4L-08
Manufacturer Part Number: IPD50N06S4L-08 | Manufacturer / Brand: Infineon |
Part of Description: MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
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Product parameters
Manufacturer | Infineon |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | TO-252-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 60 V |
Id – Continuous Drain Current | 50 A |
Rds On – Drain-Source Resistance | 6.3 mOhms |
Vgs – Gate-Source Voltage | – 16 V, + 16 V |
Vgs th – Gate-Source Threshold Voltage | 1.2 V |
Qg – Gate Charge | 64 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 71 W |
Channel Mode | Enhancement |
Tradename | OptiMOS |
Series | OptiMOS-T2 |
Brand | Infineon Technologies |
Configuration | Single |
Fall Time | 8 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Product Type | MOSFET |
Rise Time | 2 ns |
Factory Pack Quantity | 2500 |
Subcategory | MOSFETs |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 9 ns |
Width | 6.22 mm |
Part # Aliases | IPD5N6S4L8XT SP000374322 IPD50N06S4L08ATMA1 |
Unit Weight | 0.011640 oz |
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