IPI80N06S4-07
Manufacturer Part Number: IPI80N06S4-07 | Manufacturer / Brand: Infineon |
Part of Description: MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Datasheets: | |
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Product parameters
Manufacturer | Infineon |
Technology | Si |
Mounting Style | Through Hole |
Package / Case | TO-262-3 |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vds – Drain-Source Breakdown Voltage | 60 V |
Id – Continuous Drain Current | 80 A |
Rds On – Drain-Source Resistance | 7.1 mOhms |
Vgs – Gate-Source Voltage | – 20 V, + 20 V |
Vgs th – Gate-Source Threshold Voltage | 4 V |
Qg – Gate Charge | 43 nC |
Minimum Operating Temperature | – 55 C |
Maximum Operating Temperature | + 175 C |
Pd – Power Dissipation | 79 W |
Channel Mode | Enhancement |
Tradename | OptiMOS |
Series | OptiMOS-T2 |
Packaging | Tube |
Configuration | Single |
Fall Time | 5 ns |
Height | 9.45 mm |
Length | 10.2 mm |
Product Type | MOSFET |
Rise Time | 3 ns |
Factory Pack Quantity | 500 |
Subcategory | MOSFETs |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 23 ns |
Typical Turn-On Delay Time | 15 ns |
Width | 4.5 mm |
Part # Aliases | IPI8N6S47XK SP000415690 IPI80N06S407AKSA1 |
Unit Weight | 0.084199 oz |
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