IRFB3206PBF

Manufacturer Part Number: IRFB3206PBF	Manufacturer / Brand: Infineon Technologies
Part of Description: MOSFET MOSFT 60V 210A 3mOhm 120nC Qg	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: IRFB3206PBF Datesheet
100% original and authentic 100% test report if single part is over 500USD 100% damaged replacement guaranteed

Product parameters

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	60 V
Id – Continuous Drain Current	210 A
Rds On – Drain-Source Resistance	2.4 mOhms
Vgs – Gate-Source Voltage	– 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage	4 V
Qg – Gate Charge	120 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	300 W
Channel Mode	Enhancement
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Height	15.65 mm
Length	10 mm
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Width	4.4 mm
Unit Weight	0.068784 oz

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