IRFB4227PBF

Manufacturer Part Number: IRFB4227PBF	Manufacturer / Brand: Infineon Technologies
Part of Description: MOSFET MOSFT 200V 65A 26mOhm 70nC Qg	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: IRFB4227PBF.pdf
100% original and authentic 100% test report if single part is over 500USD 100% damaged replacement guaranteed

Product parameters

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	200 V
Id – Continuous Drain Current	65 A
Rds On – Drain-Source Resistance	24 mOhms
Vgs – Gate-Source Voltage	– 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage	1.8 V
Qg – Gate Charge	70 nC
Minimum Operating Temperature	– 40 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	330 W
Channel Mode	Enhancement
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Fall Time	31 ns
Forward Transconductance – Min	49 S
Height	15.65 mm
Length	10 mm
Product Type	MOSFET
Rise Time	20 ns
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	21 ns
Typical Turn-On Delay Time	33 ns
Width	4.4 mm
Unit Weight	0.068784 oz

IRFB4227PBF is the part number for a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) developed by Infineon Technologies. It is a N-channel MOSFET designed for high power switching applications, such as motor control, power supplies, and inverters. The IRFB4227PBF power MOSFET is designed to handle high currents and voltages, providing efficient power switching with low on-resistance. It offers reliable performance in demanding applications where high power and fast switching are required.

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