IRFB4332PBF

Manufacturer Part Number: IRFB4332PBF	Manufacturer / Brand: Infineon Technologies
Part of Description: MOSFET MOSFT 250V 60A 33mOhm 99nC Qg	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Ship From: HK/Shen Zhen	Shipment Way: DHL/Fedex/TNT/UPS
Datasheets: IRFB4332PBF Datesheet
100% original and authentic 100% test report if single part is over 500USD 100% damaged replacement guaranteed

Product parameters

Manufacturer	Infineon
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds – Drain-Source Breakdown Voltage	250 V
Id – Continuous Drain Current	60 A
Rds On – Drain-Source Resistance	33 mOhms
Vgs – Gate-Source Voltage	– 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage	1.8 V
Qg – Gate Charge	99 nC
Minimum Operating Temperature	– 55 C
Maximum Operating Temperature	+ 175 C
Pd – Power Dissipation	390 W
Channel Mode	Enhancement
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Forward Transconductance – Min	100 S
Height	15.65 mm
Length	10 mm
Product Type	MOSFET
Factory Pack Quantity	1000
Subcategory	MOSFETs
Transistor Type	1 N-Channel
Width	4.4 mm
Unit Weight	0.068784 oz

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