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IRFR1205TRPBF

Manufacturer Part Number: IRFR1205TRPBF Manufacturer / Brand: Infineon Technologies
Part of Description: MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:
100% original and authentic
100% test report if single part is over 500USD
100% damaged replacement guaranteed

Product parameters

Manufacturer Infineon
Brand Infineon Technologies
Product Type MOSFET
Factory Pack Quantity 2000
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 55 V
Id – Continuous Drain Current 37 A
Rds On – Drain-Source Resistance 27 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 1.8 V
Qg – Gate Charge 43.3 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 69 W
Channel Mode Enhancement
Configuration Single
Fall Time 60 ns
Height 2.3 mm
Length 6.5 mm
Rise Time 69 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 47 ns
Typical Turn-On Delay Time 7.3 ns
Width 6.22 mm
Unit Weight 0.011640 oz
Type HEXFET Power MOSFET

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