K4F8E3S4HB-MHCJ

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Manufacturer Part Number: K4F8E3S4HB-MHCJ	Manufacturer / Brand: Samsung Electro-Mechanics
Part of Description: The chip is available in a FBGA-200 package, compliant with RoHS standards, ensuring it meets environmental safety requirements.	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Shipment Way: DHL/Fedex/TNT/UPS	In-Stock: 14800
Stock: Can Ship within 1 Week	Datasheets: K4F8E3S4HB-MHCJ Datasheet
100% original and authentic 100% test report if single part is over 500USD 100% damaged replacement guaranteed

CL03A105MP3NSNC Parameters

Manufacturer	Samsung Electro-Mechanics
Series	–
D/C	Within 2 years
Version	eMMC 5.1
Density	8 Gb
Organization	x32
Speed	3733 Mbps
Voltage	1.8 / 1.1 / 1.1 V
Temperature	-40 ~ 105 °C
Package	200 FBGA

The Samsung K4F8E3S4HB-MHCJ is a DRAM chip designed for high-performance memory applications. It features a capacity of 8Gb, configured as 256Mx32, and operates with a low power DDR4 (LPDDR4) interface. This chip is suitable for a variety of applications, including mobile devices and other electronics requiring efficient and reliable memory solutions.

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