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K4F8E3S4HB-MHCJ
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| Manufacturer Part Number: K4F8E3S4HB-MHCJ | Manufacturer / Brand: Samsung Electro-Mechanics |
| Part of Description: The chip is available in a FBGA-200 package, compliant with RoHS standards, ensuring it meets environmental safety requirements. | Lead Free Status / RoHS Status: Lead free / RoHS Compliant |
| Shipment Way: DHL/Fedex/TNT/UPS | In-Stock: 14800 |
| Stock: Can Ship within 1 Week | Datasheets: |
100% original and authentic 100% test report if single part is over 500USD 100% damaged replacement guaranteed | |
CL03A105MP3NSNC Parameters
| Manufacturer | Samsung Electro-Mechanics |
| Series | – |
| D/C | Within 2 years |
| Version | eMMC 5.1 |
| Density | 8 Gb |
| Organization | x32 |
| Speed | 3733 Mbps |
| Voltage | 1.8 / 1.1 / 1.1 V |
| Temperature | -40 ~ 105 °C |
| Package | 200 FBGA |
The Samsung K4F8E3S4HB-MHCJ is a DRAM chip designed for high-performance memory applications. It features a capacity of 8Gb, configured as 256Mx32, and operates with a low power DDR4 (LPDDR4) interface. This chip is suitable for a variety of applications, including mobile devices and other electronics requiring efficient and reliable memory solutions.
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