MMBT5551LT1G

Manufacturer Part Number: MMBT5551LT1G	Manufacturer / Brand: onsemi
Part of Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)	Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Shipment Way: DHL/Fedex/TNT/UPS	Datasheets: MMBT5551LT1G Datasheet
100% original and authentic 100% test report if single part is over 500USD 100% damaged replacement guaranteed

Product parameters

Manufacturer	onsemi
Manufacturer Standard Lead Time	11 Weeks
Package	Tape & Reel (TR), Cut Tape (CT)
Description	TRANS NPN 160V 0.6A SOT23-3
Product Status	Active
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
Base Product Number	MMBT5551

The MMBT5551LT1G is a small-signal NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. As a general-purpose transistor, it finds applications in amplification and signal processing circuits. Here’s an expanded description:

The MMBT5551LT1G is an NPN silicon BJT designed for use in various electronic circuits, particularly in applications where small-signal amplification is required. This transistor belongs to the MMBT series, which signifies its compact SMT (Surface Mount Technology) package type.

As a bipolar junction transistor, the MMBT5551LT1G consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current at the base terminal, the transistor can control a larger current flow between the collector and emitter. This characteristic makes it suitable for amplifying weak signals in electronic circuits.

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